NPN bipolar transistors

NPN transistor, 2A, TO-92, TO-92, 100V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 100V. Cost): 30pF. Semiconductor material: silicon. FT: 175 MHz. Function: Very low saturation VBE(sat) 0.9V. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1200 ns. Tf(min): 80 ns. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.13V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX753. BE diode: no. CE diode: no

NPN transistor, 2A, TO-92, TO-92, 45V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 500, Very low-sat VBE(sat) 0.9V. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX790. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 5A, TO-92, TO-92, 60V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Very low saturation VBE(sat)0.92V. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1100 ns. Tf(min): 45 ns. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.2V. Vebo: 6V