NPN bipolar transistors

NPN transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: B=1000. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN

NPN transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF/SL. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN

NPN transistor, 1A, 60V. Collector current: 1A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SB764. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD871. Collector-emitter voltage Uceo [V]: 1500V/600V. Maximum dissipation Ptot [W]: 50W

NPN transistor, 3A, 30 v. Collector current: 3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat. Pd (Power Dissipation, Max): 0.75W. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SB772. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering, M31/J, 7A. Housing: PCB soldering. Housing: M31/J. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Maximum dissipation Ptot [W]: 70W

NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 40V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 40V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 4000. Pd (Power Dissipation, Max): 5W. Spec info: TO-126. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.02A, 120V. Collector current: 0.02A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF. Pd (Power Dissipation, Max): 0.4W. Type of transistor: NPN

NPN transistor, 5A, TO-92, TO-92, 20V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 50pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Vebo: 7V

NPN transistor, PCB soldering, D8/C, 500mA. Housing: PCB soldering. Housing: D8/C. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 12A, TO-220, TO-220C, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220C. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Fast-switching. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D13009K. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 12A, TO-3PN ( 2-16C1B ), TO-3PN, 400V. Collector current: 12A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D209L. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V

NPN transistor, 1.5A, TO-126F, TO-126F, 490V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 490V. BE diode: no. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 20. Minimum hFE gain: 16. Ic(pulse): 3A. Marking on the case: 4202BD. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.18V. Vebo: 13V

NPN transistor, PCB soldering (SMD), SOT-323, 40mA. Housing: PCB soldering (SMD). Housing: SOT-323. Collector current Ic [A], max.: 40mA. RoHS: yes. Component family: high frequency NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 32. Collector-emitter voltage Uceo [V]: 5.5V. Cutoff frequency ft [MHz]: 2.4GHz. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. Resistor B: no. BE diode: no. BE resistor: PCB soldering. C(in): TO-18. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Vebo: 6V

NPN transistor, 0.1A, TO-18 ( TO-206 ), TO-18, 50V. Collector current: 0.1A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 25V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V

NPN transistor, 1A, TO-39 ( TO-205 ), TO39, 60V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO39. Collector/emitter voltage Vceo: 60V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 80pF. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for medium power and switching applications. Max hFE gain: 250. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Spec info: complementary transistor (pair) BC161-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Note: ( E,C,B ). Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.2A, TO-92, TO-92, 45V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN