N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V - STD5N52U

N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V - STD5N52U. N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. On-resistance Rds On: 1.25 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 17.6A. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 21/04/2025, 06:25.