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N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V - STH8NA60FI

N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V - STH8NA60FI
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Quantity excl. VAT VAT incl.
1 - 1 5.14£ 6.17£
2 - 2 4.89£ 5.87£
3 - 4 4.63£ 5.56£
5 - 9 4.37£ 5.24£
10 - 12 4.27£ 5.12£
Quantity U.P
1 - 1 5.14£ 6.17£
2 - 2 4.89£ 5.87£
3 - 4 4.63£ 5.56£
5 - 9 4.37£ 5.24£
10 - 12 4.27£ 5.12£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V - STH8NA60FI. N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. C(in): 1350pF. Cost): 175pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast power MOSFET transistor. Id(imp): 32A. IDss (min): 25uA. Marking on the case: H8NA60FI. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V. Number of terminals: 3. Quantity per case: 1. Note: Viso 4000V. G-S Protection: no. Quantity in stock updated on 21/04/2025, 05:25.

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