Electronic components and equipment, for businesses and individuals

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - STN4NF20L

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - STN4NF20L
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.70£ 0.84£
5 - 9 0.66£ 0.79£
10 - 24 0.64£ 0.77£
25 - 49 0.63£ 0.76£
50 - 99 0.61£ 0.73£
100 - 145 0.55£ 0.66£
Quantity U.P
1 - 4 0.70£ 0.84£
5 - 9 0.66£ 0.79£
10 - 24 0.64£ 0.77£
25 - 49 0.63£ 0.76£
50 - 99 0.61£ 0.73£
100 - 145 0.55£ 0.66£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 145
Set of 1

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - STN4NF20L. N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 150pF. Cost): 30pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 4A. IDss (min): 1uA. Marking on the case: 4NF20L. Pd (Power Dissipation, Max): 3.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10.4 ns. Td(on): 2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 07/06/2025, 20:25.

We also recommend :

We also recommend :

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.