N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V - IRLD024

N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V - IRLD024. N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. C(in): 870pF. Cost): 360pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 110 ns. Various: Dynamic dv/dt Rating. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Fast Switching, Logic-Level Gate Drive. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.