Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.51£ | 1.81£ |
5 - 9 | 1.44£ | 1.73£ |
10 - 24 | 1.36£ | 1.63£ |
25 - 49 | 1.29£ | 1.55£ |
50 - 99 | 1.26£ | 1.51£ |
100 - 249 | 1.23£ | 1.48£ |
250 - 449 | 1.08£ | 1.30£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.51£ | 1.81£ |
5 - 9 | 1.44£ | 1.73£ |
10 - 24 | 1.36£ | 1.63£ |
25 - 49 | 1.29£ | 1.55£ |
50 - 99 | 1.26£ | 1.51£ |
100 - 249 | 1.23£ | 1.48£ |
250 - 449 | 1.08£ | 1.30£ |
N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905Z. N-channel transistor, 43A, 42A, 250uA, 11m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 43A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 11m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1570pF. Cost): 230pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 22ms. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 240A. IDss (min): 20uA. Equivalents: IRLR2905ZTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: AUTOMOTIVE MOSFET. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.
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