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N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V - IRFZ44N

N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V - IRFZ44N
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Quantity excl. VAT VAT incl.
1 - 4 0.97£ 1.16£
5 - 9 0.92£ 1.10£
10 - 24 0.87£ 1.04£
25 - 49 0.82£ 0.98£
50 - 99 0.80£ 0.96£
100 - 153 0.72£ 0.86£
Quantity U.P
1 - 4 0.97£ 1.16£
5 - 9 0.92£ 1.10£
10 - 24 0.87£ 1.04£
25 - 49 0.82£ 0.98£
50 - 99 0.80£ 0.96£
100 - 153 0.72£ 0.86£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 153
Set of 1

N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V - IRFZ44N. N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 04:25.

Equivalent products :

Quantity in stock : 204
IRFZ48N

IRFZ48N

N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=...
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.51£ VAT incl.
(1.26£ excl. VAT)
1.51£
Quantity in stock : 21
IRFZ46N

IRFZ46N

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=...
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.22£ VAT incl.
(1.02£ excl. VAT)
1.22£

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