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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V - IRFIBC20G

N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V - IRFIBC20G
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.43£ 1.72£
5 - 9 1.36£ 1.63£
10 - 24 1.29£ 1.55£
25 - 31 1.22£ 1.46£
Quantity U.P
1 - 4 1.43£ 1.72£
5 - 9 1.36£ 1.63£
10 - 24 1.29£ 1.55£
25 - 31 1.22£ 1.46£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 31
Set of 1

N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V - IRFIBC20G. N-channel transistor, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. Id(imp): 6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 12
IRFIBC30G

IRFIBC30G

N-channel transistor, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID ...
IRFIBC30G
N-channel transistor, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Switching. G-S Protection: no
IRFIBC30G
N-channel transistor, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Switching. G-S Protection: no
Set of 1
2.40£ VAT incl.
(2.00£ excl. VAT)
2.40£

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