N-channel FETs and MOSFETs

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 2800pF. Cost): 880pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. G-S Protection: no. Id(imp): 330A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.11 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3210pF. Cost): 690pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 290A. IDss (min): 25uA. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Used for: -55...+175°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 71A, 100A, 100A, 0.009 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 71A. ID (T=25°C): 100A. Idss (max): 100A. On-resistance Rds On: 0.009 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Vgs 20V. Pd (Power Dissipation, Max): 170W. Assembly/installation: PCB through-hole mounting. Technology: Ultra Low On-Resistance (Rds)

N-channel transistor, 30A, 42A, 250uA, 0.036 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.036 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1900pF. Cost): 450pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. G-S Protection: no. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 100V, 41A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 41A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF1310NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 42A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F1310NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 249A, 353A, 250uA, 1.2M Ohms, TO-220, TO-220AB, 24V. ID (T=100°C): 249A. ID (T=25°C): 353A. Idss (max): 250uA. On-resistance Rds On: 1.2M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 24V. C(in): 5790pF. Cost): 3440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 46 ns. Type of transistor: MOSFET. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Sw.. G-S Protection: no. Id(imp): 1412A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 83 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 115A, 162A, 250uA, 3.5m Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 115A. ID (T=25°C): 162A. Idss (max): 250uA. On-resistance Rds On: 3.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 7360pF. Cost): 1680pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 650A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 40V, 202A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 202A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF1404PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 121A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 46 ns. Ciss Gate Capacitance [pF]: 5669pF. Maximum dissipation Ptot [W]: 333W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. On-resistance Rds On: 2.7M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 4340pF. Cost): 1030pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 750A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 162A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 162A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F1404S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 95A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 72 ns. Ciss Gate Capacitance [pF]: 7360pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. On-resistance Rds On: 2.7M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 4340pF. Cost): 1030pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 750A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 118A, 169A, 250uA, 0.0046 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 118A. ID (T=25°C): 169A. Idss (max): 250uA. On-resistance Rds On: 0.0046 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 5480pF. Cost): 1210pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 88 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 680A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Spec info: Rds-on 0.0046 Ohms max. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 55V, 169A, PCB soldering, TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 169A. Housing: PCB soldering. Housing: TO-220AB. Manufacturer's marking: IRF1405PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0053 Ohms @ 101A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 5480pF. Maximum dissipation Ptot [W]: 330W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3

N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. On-resistance Rds On: 0.0037 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 4780pF. Cost): 770pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 600A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: Rds-on 0.0037 Ohms max. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 92A, 130A, 250uA, 0.0078 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. On-resistance Rds On: 0.0078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 5600pF. Cost): 890pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 110 ns. Diode threshold voltage: 1.3V. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 520A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 43A, 75A, 250uA, 1.8M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 1.8M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 6450pF. Cost): 1690pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Fast Switching, Automotive applications. G-S Protection: no. Id(imp): 1080A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 43A, 75A, 250uA, 3.9M Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 3.9M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 5110pF. Cost): 1190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast Switching, Automotive applications. G-S Protection: no. Id(imp): 700A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 43A. ID (T=25°C): 82A. Idss (max): 250uA. On-resistance Rds On: 13m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 3850pF. Cost): 610pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 280A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 75V, 82A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF2807PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 75V, 82A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F2807S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 180A, 260A, 260A, 0.019 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 260A. On-resistance Rds On: 0.019 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Pd (Power Dissipation, Max): 290W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 180A, 260A, 250uA, 0.019 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 250uA. On-resistance Rds On: 0.019 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 6320pF. Cost): 1980pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 1020A. IDss (min): 20uA. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 24 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 7500pF. Cost): 970pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 680A. IDss (min): 20uA. Marking on the case: IRF2907Z. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 180A, 180A, 0.03 Ohms, TO-220, TO-220AB ( AUIRF2907ZS-7PPBF ), 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 180A. Idss (max): 180A. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( AUIRF2907ZS-7PPBF ). Voltage Vds(max): 75V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Pd (Power Dissipation, Max): 300W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET