Electronic components and equipment, for businesses and individuals

N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V - IRF2807

N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V - IRF2807
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.59£ 1.91£
5 - 9 1.51£ 1.81£
10 - 24 1.43£ 1.72£
25 - 49 1.35£ 1.62£
50 - 99 1.32£ 1.58£
100 - 134 1.20£ 1.44£
Quantity U.P
1 - 4 1.59£ 1.91£
5 - 9 1.51£ 1.81£
10 - 24 1.43£ 1.72£
25 - 49 1.35£ 1.62£
50 - 99 1.32£ 1.58£
100 - 134 1.20£ 1.44£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 134
Set of 1

N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V - IRF2807. N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 43A. ID (T=25°C): 82A. Idss (max): 250uA. On-resistance Rds On: 13m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 3850pF. Cost): 610pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 280A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.