Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.59£ | 1.91£ |
5 - 9 | 1.51£ | 1.81£ |
10 - 24 | 1.43£ | 1.72£ |
25 - 49 | 1.35£ | 1.62£ |
50 - 99 | 1.32£ | 1.58£ |
100 - 134 | 1.20£ | 1.44£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.59£ | 1.91£ |
5 - 9 | 1.51£ | 1.81£ |
10 - 24 | 1.43£ | 1.72£ |
25 - 49 | 1.35£ | 1.62£ |
50 - 99 | 1.32£ | 1.58£ |
100 - 134 | 1.20£ | 1.44£ |
N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V - IRF2807. N-channel transistor, 43A, 82A, 250uA, 13m Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 43A. ID (T=25°C): 82A. Idss (max): 250uA. On-resistance Rds On: 13m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 3850pF. Cost): 610pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 280A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.
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