Electronic components and equipment, for businesses and individuals

N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V - IRF1405ZPBF

N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V - IRF1405ZPBF
Quantity excl. VAT VAT incl.
1 - 4 2.12£ 2.54£
5 - 9 2.02£ 2.42£
10 - 24 1.91£ 2.29£
25 - 49 1.81£ 2.17£
50 - 66 1.76£ 2.11£
Quantity U.P
1 - 4 2.12£ 2.54£
5 - 9 2.02£ 2.42£
10 - 24 1.91£ 2.29£
25 - 49 1.81£ 2.17£
50 - 66 1.76£ 2.11£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 66
Set of 1

N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V - IRF1405ZPBF. N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. On-resistance Rds On: 0.0037 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 4780pF. Cost): 770pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 600A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Rds-on 0.0037 Ohms max. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.