N-channel FETs and MOSFETs

N-channel transistor, 20A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 1460pF. Cost): 78pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Soft Switching Applications. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20T120. Number of terminals: 3. Pd (Power Dissipation, Max): 178W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 560 ns. Td(on): 50 ns. Technology: 'Trench and Fieldstop' technology IGBT transistor. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 30A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 2589pF. Cost): 77pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking, Soft Switching Applications. Germanium diode: no. Collector current: 60A. Ic(pulse): 90A. Marking on the case: H30R1202. Number of terminals: 3. Pd (Power Dissipation, Max): 390W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 792 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 30A, TO-247, PG-TO247-3, 1350V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1810pF. Cost): 50pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking, Microwave Ovens. Germanium diode: no. Collector current: 60A. Ic(pulse): 90A. Marking on the case: H30PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, Other, PG-MDIP-24-1 ( 36x23mm ), 600V. Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: 6 x IGBT For Power Management. Germanium diode: no. Collector current: 15A. Ic(pulse): 30A. Note: three phase AC motor driver. Frequency: 20kHz. Equivalents: Samsung--DC13-00253A. Number of terminals: 24. Pd (Power Dissipation, Max): 27.4W. RoHS: yes. Spec info: Ic 15A @ 25°C, 10A @ 80°C. Assembly/installation: PCB through-hole mounting. Td(off): 800 ns. Td(on): 560 ns. Technology: Control Integrated POwer System (CIPOS™). Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 2.05V

N-channel transistor, 15A, TO-220, TO-220-3-1, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Collector/emitter voltage Vceo: 600V. C(in): 860pF. Cost): 55pF. CE diode: yes. Channel type: N. Function: High Speed ​​IGBT in NPT technology. Germanium diode: no. Collector current: 15A. Ic(pulse): 45A. Marking on the case: K15T60. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 188 ns. Td(on): 17 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 1200V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 1200V. C(in): 1860pF. Cost): 96pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Germanium diode: no. Collector current: 50A. Ic(pulse): 75A. Marking on the case: K25T120. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 560 ns. Td(on): 50 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 30A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1630pF. Cost): 107pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 117 ns. Function: High Speed Switching, Very Low VCEsat. Germanium diode: no. Collector current: 60A. Ic(pulse): 60.4k Ohms. Marking on the case: K30H603. Number of terminals: 3. Pd (Power Dissipation, Max): 187W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 207 ns. Td(on): 21 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 40A, TO-247, TO-247N, 1200V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247N. Collector/emitter voltage Vceo: 1200V. C(in): 2330pF. Cost): 185pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 200 ns. Function: 'Trench and Fieldstop' technology IGBT transistor. Germanium diode: no. Collector current: 80A. Ic(pulse): 180A. Marking on the case: K40H1203. Number of terminals: 3. Pd (Power Dissipation, Max): 483W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 290 ns. Td(on): 30 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V

N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 116pF. Cost): 2960pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 130 ns. Diode threshold voltage: 1.65V. Function: High Speed Switching, Very Low VCEsat. Germanium diode: no. Collector current: 100A. Ic(pulse): 200A. Marking on the case: K50H603. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Td(on): 23 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3140pF. Cost): 200pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 143 ns. Function: Very low VCEsat. Germanium diode: no. Collector current: 80A. Ic(pulse): 150A. Marking on the case: K50T60. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 299 ns. Td(on): 26 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 288pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 182 ns. Function: Very low VCEsat. Germanium diode: no. Collector current: 80A. Ic(pulse): 225A. Marking on the case: K75T60. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Td(on): 33 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 4.6A, 7.3A, 10uA, 0.54 Ohms, TO-220FP, TO-220FP-3, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 10uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Voltage Vds(max): 650V. C(in): 440pF. Cost): 30pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: ID pulse 19A. G-S Protection: no. Id(imp): 19A. IDss (min): 1uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 6R600E6. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 10 ns. Technology: Cool Mos E6 POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V

N-channel transistor, 3.6A, 5.7A, 50uA, 0.83 Ohms, TO-220FP, TO-220FP-3, 800V. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 50uA. On-resistance Rds On: 0.83 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Voltage Vds(max): 800V. C(in): 785pF. Cost): 33pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: ID pulse 18A. G-S Protection: no. Id(imp): 18A. IDss (min): 10uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 8R1K0CE. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos E6 POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: -20V

N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7. On-resistance Rds On: 2.1M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO263-7. Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: OptiMOS Power. Operating temperature: -55...+175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, 100V, 60.4k Ohms. Housing: PCB soldering (SMD). Housing: D²-PAK. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 60.4k Ohms. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohms @ 100A. Gate breakdown voltage Ugs [V]: 3.3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 128 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 313W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 80A, 80A, 1uA, 2.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 1uA. On-resistance Rds On: 2.4M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 7500pF. Cost): 1900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 4N03L02. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 62 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Operating temperature: -55...+175°C. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V

N-channel transistor, 80A, 80A, 100uA, 5.6M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 5.6M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 3400pF. Cost): 880pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0607. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 16 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 6.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 2. Pd (Power Dissipation, Max): 215W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 80A, 80A, 100uA, 7.6m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 7.6m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 2360pF. Cost): 610pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0609. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 100A, 100A, 10uA, 2.8m Ohms, D-PAK ( TO-252 ), PG-TO252-3 ( DPAK ), 60V. ID (T=100°C): 100A. ID (T=25°C): 100A. Idss (max): 10uA. On-resistance Rds On: 2.8m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3 ( DPAK ). Voltage Vds(max): 60V. C(in): 8000pF. Cost): 1700pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Switching, Optimized tecnology for DC/DC converters. G-S Protection: no. Id(imp): 400A. IDss (min): 0.01uA. Marking on the case: 034N06N. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 63 ns. Td(on): 38 ns. Technology: OptiMOS(TM)3 Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 50A, 50A, 100uA, 0.0058 Ohms, D-PAK ( TO-252 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 100uA. On-resistance Rds On: 0.0058 Ohms. Housing: D-PAK ( TO-252 ). Voltage Vds(max): 30 v. C(in): 2400pF. Cost): 920pF. Channel type: N. Drain-source protection : yes. G-S Protection: no. Id(imp): 350A. IDss (min): 0.1uA. Marking on the case: 050N03L. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 6.7 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V

N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. On-resistance Rds On: 7.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 1900pF. Cost): 760pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. G-S Protection: no. Id(imp): 200A. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V

N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 6.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 3. Pd (Power Dissipation, Max): 215W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

N-channel transistor, 6m Ohms, PG-SOT223. On-resistance Rds On: 6m Ohms. Housing (according to data sheet): PG-SOT223. Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 6.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -40...+150°C

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220FP, HexSense TO-220F-5, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220FP. Housing (according to data sheet): HexSense TO-220F-5. Voltage Vds(max): 200V. C(in): 130pF. Cost): 430pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Single FET, Dual Source. G-S Protection: no. Id(imp): 72A. IDss (min): 25uA. Number of terminals: 5. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V