Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.46£ | 1.75£ |
5 - 9 | 1.38£ | 1.66£ |
10 - 24 | 1.31£ | 1.57£ |
25 - 49 | 1.24£ | 1.49£ |
50 - 99 | 1.21£ | 1.45£ |
100 - 129 | 1.10£ | 1.32£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.46£ | 1.75£ |
5 - 9 | 1.38£ | 1.66£ |
10 - 24 | 1.31£ | 1.57£ |
25 - 49 | 1.24£ | 1.49£ |
50 - 99 | 1.21£ | 1.45£ |
100 - 129 | 1.10£ | 1.32£ |
N-channel transistor, 30A, 42A, 250uA, 0.036 Ohms, TO-220, TO-220AB, 100V - IRF1310N. N-channel transistor, 30A, 42A, 250uA, 0.036 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.036 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1900pF. Cost): 450pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 21/04/2025, 08:25.
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