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N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5
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Quantity excl. VAT VAT incl.
1 - 1 4.98£ 5.98£
2 - 2 4.73£ 5.68£
3 - 4 4.48£ 5.38£
5 - 9 4.23£ 5.08£
10 - 19 4.13£ 4.96£
20 - 29 4.04£ 4.85£
30 - 51 3.89£ 4.67£
Quantity U.P
1 - 1 4.98£ 5.98£
2 - 2 4.73£ 5.68£
3 - 4 4.48£ 5.38£
5 - 9 4.23£ 5.08£
10 - 19 4.13£ 4.96£
20 - 29 4.04£ 4.85£
30 - 51 3.89£ 4.67£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 51
Set of 1

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5. N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 06:25.

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