Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.27£ | 12.32£ |
2 - 2 | 9.76£ | 11.71£ |
3 - 4 | 9.55£ | 11.46£ |
5 - 9 | 9.24£ | 11.09£ |
10 - 14 | 9.04£ | 10.85£ |
15 - 19 | 8.73£ | 10.48£ |
20 - 65 | 8.42£ | 10.10£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.27£ | 12.32£ |
2 - 2 | 9.76£ | 11.71£ |
3 - 4 | 9.55£ | 11.46£ |
5 - 9 | 9.24£ | 11.09£ |
10 - 14 | 9.04£ | 10.85£ |
15 - 19 | 8.73£ | 10.48£ |
20 - 65 | 8.42£ | 10.10£ |
N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IKW75N60T. N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 288pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 182 ns. Function: Very low VCEsat. Germanium diode: no. Collector current: 80A. Ic(pulse): 225A. Marking on the case: K75T60. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Td(on): 33 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 08:25.
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