N-channel transistor, 80A, 80A, 100uA, 5.6M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IPB80N06S2-07

N-channel transistor, 80A, 80A, 100uA, 5.6M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IPB80N06S2-07. N-channel transistor, 80A, 80A, 100uA, 5.6M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 5.6M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 3400pF. Cost): 880pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0607. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 16 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.