N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V - FGA60N65SMD

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V - FGA60N65SMD. N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 04:25.