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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FQA24N50

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FQA24N50
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Quantity excl. VAT VAT incl.
1 - 1 7.97£ 9.56£
2 - 2 7.57£ 9.08£
3 - 4 7.17£ 8.60£
5 - 9 6.77£ 8.12£
10 - 19 6.61£ 7.93£
20 - 29 6.45£ 7.74£
30 - 41 6.21£ 7.45£
Quantity U.P
1 - 1 7.97£ 9.56£
2 - 2 7.57£ 9.08£
3 - 4 7.17£ 8.60£
5 - 9 6.77£ 8.12£
10 - 19 6.61£ 7.93£
20 - 29 6.45£ 7.74£
30 - 41 6.21£ 7.45£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 41
Set of 1

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V - FQA24N50. N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.156 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 96A. IDss (min): 1uA. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Quantity in stock updated on 21/04/2025, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
FQA24N60

FQA24N60

N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C...
FQA24N60
N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
FQA24N60
N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
Set of 1
8.69£ VAT incl.
(7.24£ excl. VAT)
8.69£

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