DSEI2X101-12A

Quantity	excl. VAT	VAT incl.
1 - 1	47.77£	57.32£
2 - 2	45.38£	54.46£
3 - 4	44.42£	53.30£
5 - 9	43.47£	52.16£
10 - 14	42.99£	51.59£
15 - 19	42.51£	51.01£
20+	42.04£	50.45£

Quantity	U.P
1 - 1	47.77£	57.32£
2 - 2	45.38£	54.46£
3 - 4	44.42£	53.30£
5 - 9	43.47£	52.16£
10 - 14	42.99£	51.59£
15 - 19	42.51£	51.01£
20+	42.04£	50.45£

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

DSEI2X101-12A. Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: dual fast recovery diode. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Spec info: 810Ap t=10ms, TVJ=150°C. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Original product from manufacturer IXYS. Quantity in stock updated on 08/06/2025, 00:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!