Electronic components and equipment, for businesses and individuals

BY500-200

BY500-200
Quantity excl. VAT VAT incl.
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 49 0.15£ 0.18£
50 - 99 0.14£ 0.17£
100 - 249 0.13£ 0.16£
250 - 366 0.11£ 0.13£
Quantity U.P
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 49 0.15£ 0.18£
50 - 99 0.14£ 0.17£
100 - 249 0.13£ 0.16£
250 - 366 0.11£ 0.13£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 366
Set of 1

BY500-200. Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm--200Ap, t=10ms. Quantity in stock updated on 21/04/2025, 00:25.

Equivalent products :

Quantity in stock : 377
BY500-1000

BY500-1000

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm--200App t=10mS
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm--200App t=10mS
Set of 1
0.38£ VAT incl.
(0.32£ excl. VAT)
0.38£
Quantity in stock : 4155
BY500-800

BY500-800

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
Set of 1
0.25£ VAT incl.
(0.21£ excl. VAT)
0.25£

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