Electronic components and equipment, for businesses and individuals

MUR1100E

MUR1100E
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.48£ 0.58£
10 - 24 0.46£ 0.55£
25 - 49 0.43£ 0.52£
50 - 99 0.41£ 0.49£
100 - 148 0.38£ 0.46£
Quantity U.P
1 - 9 0.48£ 0.58£
10 - 24 0.46£ 0.55£
25 - 49 0.43£ 0.52£
50 - 99 0.41£ 0.49£
100 - 148 0.38£ 0.46£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 148
Set of 1

MUR1100E. Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM. Quantity in stock updated on 20/04/2025, 21:25.

Equivalent products :

Quantity in stock : 17642
UF4007

UF4007

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Sem...
UF4007
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
UF4007
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
Set of 10
1.09£ VAT incl.
(0.91£ excl. VAT)
1.09£
Quantity in stock : 404
SUF4007

SUF4007

Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( ...
SUF4007
Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 1000V. Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
SUF4007
Forward current (AV): 1A. IFSM: 27A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). VRRM: 1000V. Conditioning: roll. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Conditioning unit: 5000. Spec info: IFSM--27Ap
Set of 10
1.40£ VAT incl.
(1.17£ excl. VAT)
1.40£

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1N4007

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VIPER12A

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Forward current (AV): 1A. IFSM: 10A. Housing: DO-213. Housing (according to data sheet): DO-213AB ( ...
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Quantity in stock : 17642
UF4007

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Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Sem...
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LM393D

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RoHS: yes. Number of circuits: 2. Switching speed [ns]: 1500 ns. Input offset voltage max (V): 1mV. ...
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TIP127

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Resistance: 2.7k Ohms. Diameter: 3.5mm. Resistor type: NTC thermistor (temperature sensor). Equivale...
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