Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.48£ | 0.58£ |
10 - 24 | 0.46£ | 0.55£ |
25 - 49 | 0.43£ | 0.52£ |
50 - 99 | 0.41£ | 0.49£ |
100 - 148 | 0.38£ | 0.46£ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.48£ | 0.58£ |
10 - 24 | 0.46£ | 0.55£ |
25 - 49 | 0.43£ | 0.52£ |
50 - 99 | 0.41£ | 0.49£ |
100 - 148 | 0.38£ | 0.46£ |
MUR1100E. Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM. Quantity in stock updated on 20/04/2025, 21:25.
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