PNP bipolar transistors

NPN-Transistor. Quantity per case: 1. Spec info: substitute

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 20mA, SOT-39, SOT-39, 13V. Collector current: 20mA. Housing: SOT-39. Housing (according to data sheet): SOT-39. Collector/emitter voltage Vceo: 13V. Quantity per case: 1. Semiconductor material: GE. FT: 1250 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 20V. Vebo: 0.3V

NPN-Transistor, TO-39 ( TO-205 ), TO-39, 60V, TO39, -60V. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Housing: TO39. Collector-Emitter Voltage VCEO: -60V. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) BC141. Assembly/installation: PCB through-hole mounting. Technology: EPITAXIAL TRANSISTORS. Tf(max): 650 ns. Tf(min): 500 ns. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Type: transistor for low power applications. Polarity: PNP. Power: 0.65W. Collector-Base Voltage VCBO: -60V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 50MHz. DC Collector/Base Gain hFE min.: 30. Current Max 1: -1A. Max.Voltage IGBT VRSM: 250. Information: 100. Series: BC

NPN-Transistor, 0.1A, 45V. Collector current: 0.1A. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 120. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 460. Minimum hFE gain: 180. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -60...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC212BG. Cutoff frequency ft [MHz]: 280 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, 0.2A, TO-92, TO-92, 30 v. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 0.1A, 20V. Collector current: 0.1A. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-18, 25V, 100mA. Housing: PCB soldering. Housing: TO-18. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 1W

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 45V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V

NPN-Transistor, 0.1A, 30 v. Collector current: 0.1A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-16. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 45V, 500mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C32716. Cutoff frequency ft [MHz]: 260 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 45V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC327-25. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 45V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC327-25. Cutoff frequency ft [MHz]: 260 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226, 45V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC327-25. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226, 45V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC327-40. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 250-600. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.7V. Vebo: 5V