PNP bipolar transistors

NPN-Transistor, TO-92, 20V, 1A, TO-92. Housing: TO-92. Collector/emitter voltage Vceo: 20V. Collector current: 1A. Housing (according to data sheet): TO-92. Type of transistor: PNP. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting

NPN-Transistor, -20V, -1A, TO-92. Collector-Emitter Voltage VCEO: -20V. Collector current: -1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 0.625W

NPN-Transistor, 0.1A, 180V. Collector current: 0.1A. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 0.4W. Spec info: TO18. Type of transistor: PNP

NPN-Transistor, 100mA, TO-92, TO-92, 30 v. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: hFE 420...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 0.4A, TO-92, TO-92, 30 v. Collector current: 0.4A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 3000. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC517. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V

NPN-Transistor, PCB soldering, TO-92, TO-226, 30 v, 1A. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226, 65V, 100mA, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC556B. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC546B. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 65V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC556B. Cutoff frequency ft [MHz]: 280 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -65V, -0.1A, TO-92. Collector-Emitter Voltage VCEO: -65V. Collector current: -0.1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 0.5W

NPN-Transistor, 100mA, TO-92, TO-92, 80V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) BC546C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 100mA, TO-92, TO-92 ( Ammo-Pak ), 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo-Pak ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 110. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) BC547A. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 45V, 100mA, TO-92, 50V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC557B. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC547B. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 45V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC557B. Cutoff frequency ft [MHz]: 320 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -50V, -0.2A, TO-92. Collector-Emitter Voltage VCEO: -50V. Collector current: -0.2A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 0.5W

NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. C(in): 10pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC547C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 45V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC557B. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 45V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC557C. Cutoff frequency ft [MHz]: 320 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, TO-92, TO-92, 30 v. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Switching, and AF Amplifier. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.08V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 30 v, 200mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C559A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.1A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 200...450. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC550B. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 100mA, TO-92, TO-92, 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 380. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC550C. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC550C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 110pF. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, TO-92, TO-92 (Ammo), 100V, 1A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo). Collector/emitter voltage Vceo: 100V. Collector current: 1A. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Vcbo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 160. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.8W