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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.2A, 45V - BC213B

NPN-Transistor, 0.2A, 45V - BC213B
[TITLE]
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.65£ 0.78£
3 - 4 0.62£ 0.74£
5 - 9 0.59£ 0.71£
10 - 19 0.57£ 0.68£
20 - 49 0.55£ 0.66£
50 - 99 0.53£ 0.64£
100 - 115 0.44£ 0.53£
Quantity (Set of 5) U.P
1 - 2 0.65£ 0.78£
3 - 4 0.62£ 0.74£
5 - 9 0.59£ 0.71£
10 - 19 0.57£ 0.68£
20 - 49 0.55£ 0.66£
50 - 99 0.53£ 0.64£
100 - 115 0.44£ 0.53£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 573
Set of 5

NPN-Transistor, 0.2A, 45V - BC213B. NPN-Transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Original product from manufacturer Cdil. Quantity in stock updated on 08/06/2025, 18:25.

Equivalent products :

Quantity in stock : 4635
BC557C

BC557C

NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
BC557C
NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. C(in): 10pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC547C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V
BC557C
NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. C(in): 10pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC547C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V
Set of 10
0.70£ VAT incl.
(0.58£ excl. VAT)
0.70£

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BC547B

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BC337-25

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BC547A

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BC559C

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