PNP bipolar transistors

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 800mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 125. Ic(pulse): 200mA. Marking on the case: 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: screen printing/SMD code 3A

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3B. Equivalents: ON Semiconductor BC856BLT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.065V. Vebo: 5V. Spec info: screen printing/SMD code 3B. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SC-70, SOT-323, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SC-70. Housing (JEDEC standard): SOT-323. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 250. Minimum hFE gain: 125. Ic(pulse): 200mA. Marking on the case: 3E. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: °C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: SMD 3E

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Spec info: SMD KO0 3F

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

ROHS: Yes. Housing: SOT363. Frequency: 100MHz. Power: 200mW. Assembly/installation: SMD. Type of transistor: PNP x2. Polarity: bipolar. Voltage (collector - emitter): 45V. Collector current Ic [A]: 100mA. Original packaging: 3000

NPN-Transistor, PCB soldering (SMD), TSSOP6, 50V, 100mA. Housing: PCB soldering (SMD). Housing: TSSOP6. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: 3Ft. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: dual PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: screen printing/CMS code 3G. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

ROHS: Yes. Housing: SOT23. Frequency: 100MHz, 150MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 100mA. Power: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3L. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: SMD 3F

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: no. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 4C. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-89, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: CEC. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF/S. Max hFE gain: 2000. Minimum hFE gain: 1000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1.3V. Vebo: 5V

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP51/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BCP54-16. BE diode: no. CE diode: no

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP52/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BCP55-16. BE diode: no. CE diode: no