PNP bipolar transistors

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, SOT-93, SOT-93, 100V, 25A. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD250C. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, TO-126 (TO-225, SOT-32), TO-126, 32V, 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 32V. Collector current: 4A. Type of transistor: PNP. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Spec info: complementary transistor (pair) BD435. Assembly/installation: PCB through-hole mounting

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. RoHS: yes. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 30. Ic(pulse): 7A. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. Spec info: complementary transistor (pair) BD437. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. BE diode: no. CE diode: no. Quantity per case: 1

NPN-Transistor, -45V, -4A, TO-126 FULLPACK. Collector-Emitter Voltage VCEO: -45V. Collector current: -4A. Housing: TO-126 FULLPACK. Type of transistor: Power Transistor. Polarity: PNP. Power: 36W. Max frequency: 3MHz

NPN-Transistor, PCB soldering, TO-126, SOT-32, 60V, 4A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD440. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD442. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Spec info: insulated-case. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 5A, TO-220, TO-220, 45V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: NF-L. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 20. Vebo: 1.5V

NPN-Transistor, 8A, TO-220, TO-220, 60V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 62.5W. RoHS: yes. Spec info: Be--R1 (10k Ohms), R2 (750 Ohms). Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 120V, 8A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD652. Maximum dissipation Ptot [W]: 62.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 10A, 45V. Collector current: 10A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 75W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, SOT-32, 60V, 4A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD678. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 60V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD677A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Vebo: 5V

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD679. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10MHz. Function: Power Linear and Switching. Minimum hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 14W. RoHS: yes. Spec info: complementary transistor (pair) BD679A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 2.8V. Vebo: 5V

NPN-Transistor, 100V, 4A. Collector/emitter voltage Vceo: 100V. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Minimum hFE gain: 750

NPN-Transistor, PCB soldering, TO-225, TO-225, 100V, 4A. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD682G. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220, TO-220, 80V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD810G. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, TO-202, TO-202; SOT128B, 100V. Collector current: 1A. Housing: TO-202. Housing (according to data sheet): TO-202; SOT128B. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 75 MHz. Function: NF-L. Pd (Power Dissipation, Max): 8W. Spec info: complementary transistor (pair) BD829. Type of transistor: PNP

NPN-Transistor, 8A, 100V. Collector current: 8A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BD901. Type of transistor: PNP

NPN-Transistor, 15A, 45V. Collector current: 15A. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 90W. Type of transistor: PNP

NPN-Transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): +150°C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: complementary transistor (pair) BD911. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB