PNP bipolar transistors

NPN-Transistor, 1A, SOT-89, SOT-89, 45V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Pd (Power Dissipation, Max): 1.3W. Spec info: screen printing/SMD code AA. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 45V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AD. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 60V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AM. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: AH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: screen printing/SMD code AH. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Ic(pulse): 1.5A. Note: screen printing/SMD code AK. Marking on the case: AK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: complementary transistor (pair) BCX56-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, SOT89, -80V. Housing: SOT89. Collector-Emitter Voltage VCEO: -80V. Type: transistor for low power applications. Polarity: PNP. Power: 1W. Collector-Base Voltage VCBO: -100V. Mounting Type: SMD. Bandwidth MHz: 125MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: -1A. Series: BCX

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AL. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Pd (Power Dissipation, Max): 0.35W. Type of transistor: PNP

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 1.5A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, TO-126 (TO-225, SOT-32), TO-126, 80V, 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD139-16. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 3A

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 25. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD139. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1.5A, 45V. Collector current: 1.5A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Audio, power linear and switching applications. Max hFE gain: 40. Minimum hFE gain: 25. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) BD237. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-225, TO-225, 80V, 2A. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD238G. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -80V, -2A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -2A. Housing: TO-126. Type of transistor: Power Transistor. Polarity: PNP. Power: 25W. Max frequency: 3MHz

NPN-Transistor, 2A, TO-220, TO-220, 115V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: complementary transistor (pair) BD239C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD241C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 3A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 3A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD242CG. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 6A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD244C. Maximum dissipation Ptot [W]: 65W. Operating temperature range max (°C): +150°C. Operating temperature range min (°C): -55°C

NPN-Transistor, TO-220, 6A, TO-220, 100V. Housing: TO-220. Collector current: 6A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) BD243C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65°C...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) BD245C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) BD245C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP