NPN-Transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V - BCR562E6327HTSA1
| Quantity (Set of 10) | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 1.24£ | 1.49£ |
| 2 - 2 | 1.18£ | 1.42£ |
| 3 - 4 | 1.12£ | 1.34£ |
| 5 - 9 | 1.06£ | 1.27£ |
| 10 - 24 | 1.00£ | 1.20£ |
| Quantity (Set of 10) | U.P | |
|---|---|---|
| 1 - 1 | 1.24£ | 1.49£ |
| 2 - 2 | 1.18£ | 1.42£ |
| 3 - 4 | 1.12£ | 1.34£ |
| 5 - 9 | 1.06£ | 1.27£ |
| 10 - 24 | 1.00£ | 1.20£ |
NPN-Transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V - BCR562E6327HTSA1. NPN-Transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE resistor: 4.7k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP Silicon Digital Transistor. Minimum hFE gain: 50. Marking on the case: XUs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 04:25.
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