NPN transistor, 0.5A, 30 v - MPSA13
| Quantity (Set of 5) | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 2 | 0.74£ | 0.89£ |
| 3 - 4 | 0.70£ | 0.84£ |
| 5 - 9 | 0.66£ | 0.79£ |
| 10 - 19 | 0.63£ | 0.76£ |
| 20 - 34 | 0.59£ | 0.71£ |
| Quantity (Set of 5) | U.P | |
|---|---|---|
| 1 - 2 | 0.74£ | 0.89£ |
| 3 - 4 | 0.70£ | 0.84£ |
| 5 - 9 | 0.66£ | 0.79£ |
| 10 - 19 | 0.63£ | 0.76£ |
| 20 - 34 | 0.59£ | 0.71£ |
Delivery in 2-3 days, with postal tracking!
NPN transistor, 0.5A, 30 v - MPSA13. NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 02:25.
Equivalent products :
MPSA14
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (accord...
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. Number of terminals: 3. BE diode: no. CE diode: no
NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. Number of terminals: 3. BE diode: no. CE diode: no
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