NPN bipolar transistors

NPN transistor, 100V, 15A, TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 15A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 90W

NPN transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: complementary transistor (pair) BD912. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, SOT223, 60V. Housing: SOT223. Collector-Emitter Voltage VCEO: 60V. Type: transistor for low power applications. Polarity: NPN. Power: 5W. Collector-Base Voltage VCBO: 60V. Mounting Type: SMD. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 15. Current Max 1: 3A. Series: BDP

NPN transistor, PCB soldering (SMD), SOT-223, 3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 3A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP949. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: yes. CE diode: yes. Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDT64C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-247, 10A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220, 15A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V, 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. Collector current: 15A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDW84C

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 100V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) BDW84C. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW84D. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 12A, PCB soldering, TO-220AB. Collector current Ic [A], max.: 12A. Housing: PCB soldering. Housing: TO-220AB. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3

NPN transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: complementary transistor (pair) BDW94CF. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN transistor, 100V, 12A, TO-220FP. Collector-Emitter Voltage VCEO: 100V. Collector current: 12A. Housing: TO-220FP. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 33W

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 70W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 10A. Series: BDX33

NPN transistor, 80V, 8A, TO-220-F. Collector-Emitter Voltage VCEO: 80V. Collector current: 8A. Housing: TO-220-F. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 20W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 60W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 8A. Series: BDX53

NPN transistor, 15A, TO-3 ( TO-204 ), TO3, 350V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO3. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Semiconductor material: silicon. Function: switching-mode power supply. Pd (Power Dissipation, Max): 95W. RoHS: no. Td(off): 3.5us. Td(on): 0.5us. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 750V

NPN transistor. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 25V, 0.1A, TO-92. Collector-Emitter Voltage VCEO: 25V. Collector current: 0.1A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Applications: RF-POWER. Max frequency: 400MHz

NPN transistor. Quantity per case: 1. Function: TV-IF-reVHF

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF240. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Maximum dissipation Ptot [W]: 0.22W

NPN transistor, 0.1A, TO-92, TO-92, 300V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Function: VIDEO amp.. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.3W