NPN bipolar transistors

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 45V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-126, 1.5A, 1.5A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 50 MHz. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BD140

NPN transistor, PCB soldering, TO-126, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. RoHS: yes. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139-10. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 80V, 1A, TO-126 FULLPACK. Collector-Emitter Voltage VCEO: 80V. Collector current: 1A. Housing: TO-126 FULLPACK. Type of transistor: NPN power transistor. Polarity: NPN. Power: 10W

NPN transistor, 1.5A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 80V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no

NPN transistor, 80V, 1.5A, TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current: 1.5A. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 12.5W

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 80V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD140-16. BE diode: no. CE diode: no

NPN transistor, 0.5A, TO126, 375V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO126. Collector/emitter voltage Vceo: 375V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-225, 3mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 3mA. RoHS: yes. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD179G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 0.03W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 1.5A, 100V. Collector current: 1.5A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: NF-L. Pd (Power Dissipation, Max): 12.5W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-126, 2A, 2A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 2A. Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Cutoff frequency ft [MHz]: 3 MHz. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Spec info: complementary transistor (pair) BD238

NPN transistor, 2A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. Spec info: complementary transistor (pair) BD238. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-225, 2A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 2A. RoHS: yes. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 2A, TO-220, 100V, TO-220, 115V. Collector current: 2A. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 30W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BD240C

NPN transistor, TO-220, 100V, 3A, 5A, TO-220, 100V. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 3A. Collector current: 5A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 40W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C

NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no

NPN transistor, 6A, 100V, 6A, TO-220. Collector current Ic [A], max.: 6A. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Housing: TO-220. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-220AB, 6A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 6A. RoHS: yes. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no

NPN transistor, 6A, TO-220, 100V, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V

NPN transistor, 10A, TO-3PN ( 2-16C1B ), TO-3P, 115V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Spec info: complementary transistor (pair) BD246C

NPN transistor, 10A, 115V. Collector current: 10A. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Spec info: complementary transistor (pair) BD246C