NPN bipolar transistors

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: BH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: screen printing/SMD code BH. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Ic(pulse): 1.5A. Note: screen printing/SMD code BK. Marking on the case: BK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: complementary transistor (pair) BCX53-10. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-89, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BL. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: NF-TR. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 200mA. Marking on the case: AK*. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD AK* (AKp, AKt, AKW). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 100mA, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 100mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 1000. Minimum hFE gain: 40. Ic(pulse): 200A. Pd (Power Dissipation, Max): 0.34W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.75V

NPN transistor, PCB soldering, TO-18, 200mA. Housing: PCB soldering. Housing: TO-18. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-206AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BCY59-9. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 3A, 60V. Collector current: 3A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 18.5W. Type of transistor: NPN

NPN transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 45V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering, TO-126, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-126, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139-10. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 80V, 1A, TO-126 FULLPACK. Collector-Emitter Voltage VCEO: 80V. Collector current: 1A. Housing: TO-126 FULLPACK. Type of transistor: NPN power transistor. Polarity: NPN. Power: 10W

NPN transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Spec info: complementary transistor (pair) BD140-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 80V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD140-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 80V, 1.5A, TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current: 1.5A. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 12.5W

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 80V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD140-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO126, 375V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO126. Collector/emitter voltage Vceo: 375V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-225, 3mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 3mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD179G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 0.03W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 1.5A, 100V. Collector current: 1.5A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: NF-L. Pd (Power Dissipation, Max): 12.5W. Type of transistor: NPN

NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) BD238. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25

NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 25. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) BD238. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.6V

NPN transistor, PCB soldering, TO-225, 2A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD237G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD239C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 30W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 100V, 3A, TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 3A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 40W. Max frequency: 3MHz