NPN bipolar transistors

NPN transistor, PCB soldering, TO-247, 10A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220, 15A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, SOT-93, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V. Housing: PCB soldering. Housing: SOT-93. Collector current Ic [A], max.: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW83C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Cutoff frequency ft [MHz]: hFE 750 (@3V, 6A). Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 100V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDW84C

NPN transistor, 12A, TO-220, 12A, TO-220AB, 100V, 100V. Collector current: 12A. Housing: TO-220. Collector current Ic [A], max.: 12A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 20 MHz. Maximum dissipation Ptot [W]: 80W. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 3V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 80W. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Quantity per case: 2. Number of terminals: 3. Function: complementary transistor (pair) BDW94CF. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms

NPN transistor, 100V, 12A, TO-220FP. Collector-Emitter Voltage VCEO: 100V. Collector current: 12A. Housing: TO-220FP. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 33W

NPN transistor, PCB soldering, TO-220AB, 12A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 12A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-220, TO-220AB, 100V, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 2.5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 70W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX34C

NPN transistor, 80V, 8A, TO-220-F. Collector-Emitter Voltage VCEO: 80V. Collector current: 8A. Housing: TO-220-F. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 20W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750

NPN transistor, 8A, TO-220, TO-220AB, 100V, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: +150°C. Minimum hFE gain: 750. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 60W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) BDX54C. Function: audio amplifier. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms

NPN transistor, 15A, TO-3 ( TO-204 ), TO3, 350V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO3. Collector/emitter voltage Vceo: 350V. Semiconductor material: silicon. Function: switching-mode power supply. Pd (Power Dissipation, Max): 95W. RoHS: no. Td(off): 3.5us. Td(on): 0.5us. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 750V. Quantity per case: 1

NPN transistor. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 100mA, TO-92, TO-92, 25V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. Cost): 3.5pF. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Vebo: 4 v. Resistor B: NPN transistor. BE resistor: RF-POWER. C(in): 25V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor. Function: TV-IF-reVHF. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF240. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Maximum dissipation Ptot [W]: 0.22W

NPN transistor, 0.1A, TO-92, TO-92, 300V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 90 MHz. Function: VIDEO amp.. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.3W

NPN transistor, 0.5A, TO-92, 300V. Collector current: 0.5A. Housing: TO-92. Collector/emitter voltage Vceo: 300V. Cost): 2pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 500mA, TO-92, TO-92, 300V. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Temperature: +150°C. Pd (Power Dissipation, Max): 800mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF421. BE diode: no. CE diode: no

NPN transistor, 50mA, TO-92, TO-92, 250V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 250V. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) BF423. BE diode: no. CE diode: no

NPN transistor, 0.1A, 160V. Collector current: 0.1A. Collector/emitter voltage Vceo: 160V. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no