Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.0726£ | 0.0871£ |
10 - 24 | 0.0689£ | 0.0827£ |
25 - 49 | 0.0653£ | 0.0784£ |
50 - 99 | 0.0617£ | 0.0740£ |
100 - 249 | 0.0581£ | 0.0697£ |
250 - 499 | 0.0544£ | 0.0653£ |
500 - 3916 | 0.0508£ | 0.0610£ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.0726£ | 0.0871£ |
10 - 24 | 0.0689£ | 0.0827£ |
25 - 49 | 0.0653£ | 0.0784£ |
50 - 99 | 0.0617£ | 0.0740£ |
100 - 249 | 0.0581£ | 0.0697£ |
250 - 499 | 0.0544£ | 0.0653£ |
500 - 3916 | 0.0508£ | 0.0610£ |
NPN transistor, 100mA, TO-92, TO-92, 25V - BF199. NPN transistor, 100mA, TO-92, TO-92, 25V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. Cost): 3.5pF. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Vebo: 4 v. Resistor B: NPN transistor. BE resistor: RF-POWER. C(in): 25V. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 22/04/2025, 02:25.
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