NPN bipolar transistors

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD682. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD809G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Spec info: complementary transistor (pair) BD912. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: complementary transistor (pair) BD912. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

ROHS: Yes. Housing: SOT223

NPN transistor, PCB soldering (SMD), SOT-223, 3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 3A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP949. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: yes. CE diode: yes. Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDT64C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-247, 10A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220, 15A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, SOT-93, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V. Housing: PCB soldering. Housing: SOT-93. Collector current Ic [A], max.: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW83C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: hFE 750 (@3V, 6A). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 100V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) BDW84C. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW84D. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 12A, 12A, TO-220, TO-220AB, 100V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 12A. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 20 MHz. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 3V

NPN transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: complementary transistor (pair) BDW94CF. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN transistor, PCB soldering, TO-220AB, 12A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 12A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO-220, 10A, TO-220AB, 100V. Housing: TO-220. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: 10k Ohms. BE diode: no. BE resistor: 150 Ohms. C(in): TO-220. Cost): TO-220. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BDX34C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 2.5V

NPN transistor, 8A, TO-220, TO-220AB, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: 10k Ohms. BE diode: no. BE resistor: 150 Ohms. C(in): TO-220AB. Cost): TO-220AB. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: audio amplifier. Max hFE gain: +150°C. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX54C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 15A, TO-3 ( TO-204 ), TO3, 350V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO3. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Semiconductor material: silicon. Function: switching-mode power supply. Pd (Power Dissipation, Max): 95W. RoHS: no. Td(off): 3.5us. Td(on): 0.5us. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 750V

NPN transistor. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 100mA, TO-92, TO-92, 25V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Vebo: 4 v

NPN transistor. Quantity per case: 1. Function: TV-IF-reVHF

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF240. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C