NPN bipolar transistors

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218AB, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AB. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Vebo: 5V. Spec info: complementary transistor (pair) BD250C. BE diode: no. CE diode: no

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) BD250C

NPN transistor, 6A, SOT-82, 100V. Collector current: 6A. Housing: SOT-82. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN

NPN transistor, 4A, TO-126, 22V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 22V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, 45V, TO-126, TO-126, 45V, TO-126 (TO-225, SOT-32). Collector current: 4A. Collector-Emitter Voltage VCEO: 45V. Housing: TO-126. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 30. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD438

NPN transistor, 4A, TO-126F, TO-126F, 45V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, SOT-32, 60V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): SOT-32. Collector/emitter voltage Vceo: 60V. Housing: TO-126 (TO-225, SOT-32). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 20. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.8V. Spec info: complementary transistor (pair) BD440

NPN transistor, 80V, 4A, TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current: 4A. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz

NPN transistor, 4A, 80V, 4A, TO-126, TO-126F, TO-126F, 80V. Collector current Ic [A], max.: 4A. Collector-Emitter Voltage VCEO: 80V. Collector current: 4A. Housing: TO-126. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. Manufacturer's marking: BD441G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 8A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD649. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 62.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, 45V. Collector current: 10A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677A. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677AG. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD679. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD680A. BE diode: no. CE diode: yes

NPN transistor, 4A, 100V, TO-126, TO-126, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Collector-Emitter Voltage VCEO: 100V. Housing: TO-126. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD682

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: yes. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD809G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 15A. Cost): 90W. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no

NPN transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT223

NPN transistor, PCB soldering (SMD), SOT-223, 3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 3A. RoHS: yes. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP949. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Function: hFE 1000. Spec info: complementary transistor (pair) BDT64C. BE diode: yes. CE diode: yes