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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32) - 2SD882

NPN transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32) - 2SD882
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.73£ 0.88£
5 - 9 0.69£ 0.83£
10 - 24 0.66£ 0.79£
25 - 49 0.62£ 0.74£
50 - 53 0.61£ 0.73£
Quantity U.P
1 - 4 0.73£ 0.88£
5 - 9 0.69£ 0.83£
10 - 24 0.66£ 0.79£
25 - 49 0.62£ 0.74£
50 - 53 0.61£ 0.73£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

NPN transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32) - 2SD882. NPN transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32). Collector current: 3A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. Housing: TO-126 (TO-225, SOT-32). Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB772. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 397
MJE243G

MJE243G

NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according...
MJE243G
NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. BE diode: no. CE diode: no
MJE243G
NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. BE diode: no. CE diode: no
Set of 1
0.78£ VAT incl.
(0.65£ excl. VAT)
0.78£
Quantity in stock : 52
KSD882-Y

KSD882-Y

NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (accord...
KSD882-Y
NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 30 v. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: SD882-Y
KSD882-Y
NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 30 v. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: SD882-Y
Set of 1
0.35£ VAT incl.
(0.29£ excl. VAT)
0.35£

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