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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 100V, SOT23 - BSS123

N-channel transistor, 100V, SOT23 - BSS123
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.11£ 1.33£
2 - 2 1.06£ 1.27£
3 - 4 1.00£ 1.20£
5 - 9 0.98£ 1.18£
10 - 24 0.91£ 1.09£
25 - 49 0.88£ 1.06£
50 - 2849 0.74£ 0.89£
Quantity (Set of 10) U.P
1 - 1 1.11£ 1.33£
2 - 2 1.06£ 1.27£
3 - 4 1.00£ 1.20£
5 - 9 0.98£ 1.18£
10 - 24 0.91£ 1.09£
25 - 49 0.88£ 1.06£
50 - 2849 0.74£ 0.89£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 28490
Set of 10

N-channel transistor, 100V, SOT23 - BSS123. N-channel transistor, 100V, SOT23. Vdss (Drain to Source Voltage): 100V. Housing: SOT23. Pd (Power Dissipation, Max): 0.25W. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 150mA. Rds On (Max) @ Id, Vgs: 6 Ohms / 120mA / 10V. Gate/source voltage Vgs max: ±20V. Operating temperature: 150°C. Mounting Type: SMD. MSL: 1. Original product from manufacturer Nexperia. Quantity in stock updated on 04/09/2025, 04:56.

Technical documentation

Equivalent products :

Quantity in stock : 2964
BSS123-ONS

BSS123-ONS

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25...
BSS123-ONS
N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. G-S Protection: no. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V
BSS123-ONS
N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. G-S Protection: no. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V
Set of 10
1.38£ VAT incl.
(1.15£ excl. VAT)
1.38£

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