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N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123

N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.98£ 1.18£
2 - 2 0.93£ 1.12£
3 - 4 0.88£ 1.06£
5 - 9 0.86£ 1.03£
10 - 24 0.83£ 1.00£
25 - 49 0.80£ 0.96£
50 - 1029 0.70£ 0.84£
Quantity (Set of 10) U.P
1 - 1 0.98£ 1.18£
2 - 2 0.93£ 1.12£
3 - 4 0.88£ 1.06£
5 - 9 0.86£ 1.03£
10 - 24 0.83£ 1.00£
25 - 49 0.80£ 0.96£
50 - 1029 0.70£ 0.84£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 10290
Set of 10

N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123. N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 150mA. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 23pF. Cost): 6pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. G-S Protection: no. Id(imp): 600mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123LT1G, BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Vgs(th) min.: 1V. Original product from manufacturer Nexperia. Quantity in stock updated on 07/06/2025, 20:25.

Equivalent products :

Quantity in stock : 2970
BSS123-ONS

BSS123-ONS

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25...
BSS123-ONS
N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. G-S Protection: no. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V
BSS123-ONS
N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. G-S Protection: no. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V
Set of 10
1.38£ VAT incl.
(1.15£ excl. VAT)
1.38£

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