N-channel transistor, 4.4A, 6A, 100nA, 0.8 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v - BSP100

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Quantity	excl. VAT	VAT incl.
1 - 4	0.71£	0.85£
5 - 9	0.67£	0.80£
10 - 24	0.64£	0.77£
25 - 49	0.60£	0.72£
50 - 99	0.59£	0.71£
100 - 172	0.57£	0.68£

Quantity	U.P
1 - 4	0.71£	0.85£
5 - 9	0.67£	0.80£
10 - 24	0.64£	0.77£
25 - 49	0.60£	0.72£
50 - 99	0.59£	0.71£
100 - 172	0.57£	0.68£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 172

Set of 1

N-channel transistor, 4.4A, 6A, 100nA, 0.8 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v - BSP100. N-channel transistor, 4.4A, 6A, 100nA, 0.8 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v. ID (T=100°C): 4.4A. ID (T=25°C): 6A. Idss (max): 100nA. On-resistance Rds On: 0.8 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 30 v. C(in): 250pF. Cost): 88pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 10nA. Number of terminals: 4. Pd (Power Dissipation, Max): 8.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 6 ns. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.8V. Vgs(th) min.: 1V. Technology: Enhancement mode, TrenchMOS transistor. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.

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