Toshiba 2SK3936 N-Channel Power MOSFET 500V 23A TO-3PN

Technical description of the product (2SK3936):

Toshiba 2SK3936 N-Channel Power MOSFET. Maximum Drain-Source Voltage Vds(max): 500V. Maximum Drain-Source Leakage Current Idss: 500uA. Drain Current Id (T=25°C): 23A. On-Resistance Rds On: 0.20 Ohms. Package (according to datasheet): TO-3P. Package: TO-3PN (2-16C1B). RoHS compliant: yes. Number of connections: 3. Mounting/Installation: Through-hole mounting for printed circuit boards. Channel Type: N. Transistor Type: MOSFET. Function: Switching Regulator. Technology: Field Effect MOS Type (MACH-II-MOS VI). Gate-Source Protection: yes. Turn-off Delay Time Td(off): 80 ns. Turn-on Delay Time Td(on): 45 ns. Quantity per package: 1. Pulsed Drain Current Id(imp): 92A. Minimum Gate-Source Threshold Voltage Vgs(th): 2V. Input Capacitance C(in): 4250pF. Output Capacitance C(out): 420pF. Minimum Diode Reverse Recovery Time Trr: 380 ns. Maximum Power Dissipation: 150W. Drain-Source Protection: Diode. Gate-Source Voltage Vgs: 30V. Maximum Gate-Emitter Voltage VGE(th): 4V. Temperature: +150°C.