Toshiba 2SK2039 N-Channel V-MOSFET, 900V, 5A, TO-3PN Package

Technical description of the product (2SK2039):

Voltage Vds(max): 900V. Idss (max): 300uA. ID (T=25°C): 5A. ID (T=100°C): 3A. On-resistance Rds On: 1.9 Ohms. Housing (according to data sheet): TO-3PN. Housing: TO-3PN (2-16C1B). RoHS: yes. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Channel type: N. Type of transistor: MOSFET. Function: High-Speed. Technology: V-MOS. Max temperature: +150°C. G-S Protection: no. Td(off): 210 ns. Td(on): 70 ns. Quantity per case: 1. Id(imp): 15A. Vgs(th) min.: 1.5V. C(in): 690pF. C(oss): 120pF. Trr Diode (Min.): 1450 ns. Pd (Power Dissipation, Max): 150W. Drain-source protection: diode. Gate/source voltage Vgs: 30V. Vgs(th) max.: 3.5V.