PNP bipolar transistors

NPN-Transistor, PCB soldering (SMD), D-PAK, TO-252, 80V, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J45H11. Cutoff frequency ft [MHz]: 90 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, TO220, -150V, 8A, TO-220, TO-220AB, 150V. Housing: TO220. Collector-Emitter Voltage VCEO: -150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Type: Power. Polarity: PNP. Power: 50W. Collector-Base Voltage VCBO: -150V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 30MHz. DC Collector/Base Gain hFE min.: 20. Current Max 1: -8A. Max.Voltage IGBT VRSM: 30 MHz. Information: for audio amplifier. Series: 40. MSL: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15030G. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, -250V, -8A, TO-220. Collector-Emitter Voltage VCEO: -250V. Collector current: -8A. Housing: TO-220. Type of transistor: Power Transistor. Polarity: PNP. Power: 50W. Max frequency: 30MHz

NPN-Transistor, TO-220, 8A, TO-220AB, 250V. Housing: TO-220. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 50. Minimum hFE gain: 10. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15032. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: hFE=100 (Min) @ IC=0.5Adc. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 120pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE200. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) MJE243. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1

NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. RoHS: yes. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB

NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 60V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE2955TG. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 300V, 500mA, TO-126 (TO-225, SOT-32), TO-126, 300V, PCB soldering, SOT-32, TO-126. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Number of terminals: 3. Manufacturer's marking: MJE350. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting

NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 7pF. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V

NPN-Transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V

NPN-Transistor, 300V, 500mA, PCB soldering, TO-225, TO-225. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Manufacturer's marking: MJE350G. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3

NPN-Transistor, 8A, 400V. Collector current: 8A. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Vcbo: 450V

NPN-Transistor, PCB soldering, TO-220, TO-220, 400V, 8A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE5852G. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -80V, -4A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Power: 40W. Max frequency: 1MHz. DC Collector/Base Gain hFE min.: 750

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. Cost): 1.7pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL3281A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 500pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21194. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4281A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Type of transistor: PNP. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW3281A. Assembly/installation: PCB through-hole mounting. Technology: Power Bipolar Transistor. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 5V

ROHS: Yes. Housing: SOT23. Frequency: 200MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 60V. Collector current Ic [A]: 0.6A. Gain hfe: 50...300. Power: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 60V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2F. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C