PNP bipolar transistors

NPN-Transistor, 0.8A, TO-92, TO-92AMMO, 60V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92AMMO. Collector/emitter voltage Vceo: 60V. BE diode: no. C(in): 30pF. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 75. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 60V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2907A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-363, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-363. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: dual PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: B*1. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1.5A, TO-92, TO-92, 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V

NPN-Transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. BE resistor: 4. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: Medium Power Amplifier. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) STD1862. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 0.5A, SOT-223 ( TO-226 ), SOT-223, 600V. Collector current: 0.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 600V. BE diode: no. CE diode: no. Conditioning: roll. Quantity per case: 1. Function: high voltage fast-switching, PNP power transistor. Max hFE gain: 140. Minimum hFE gain: 50. Ic(pulse): 1A. Marking on the case: N9260. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf (type): 150 ns. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN-Transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N93003. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Spec info: complementary transistor (pair) STN83003. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V

NPN-Transistor, -20V, -1A, TO-92. Collector-Emitter Voltage VCEO: -20V. Collector current: -1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 1W. Max frequency: 65MHz. Applications: Audio

NPN-Transistor, -45V, -1A, TO-92. Collector-Emitter Voltage VCEO: -45V. Collector current: -1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 0.8W. Max frequency: 150MHz. Applications: Audio

NPN-Transistor, 8A, TO-220, TO-220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: switching, audio amplifier. Max hFE gain: 20000. Minimum hFE gain: 1000. Ic(pulse): 15A. Note: 10k Ohms (R1), 600 Ohms (R2). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) TIP102. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 80V, 5A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP126. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -100V, TO220, 5A, TO-220, TO-220, 100V. Collector-Emitter Voltage VCEO: -100V. Housing: TO220. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Polarity: PNP. Type: Darlington transistor. Power: 65W. Collector-Base Voltage VCBO: -100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 1000. Current Max 1: -5A. Series: TIP127. Bandwidth MHz: 50. Max.Voltage IGBT VRSM: silicon. Information: kHz. Minimum hFE gain: 1000. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) TIP122. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: 8 k Ohms és 120 Ohms. Cost): 300pF. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: 8k Ohms (R1), 120 Ohms (R2). Minimum hFE gain: 1000. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) TIP122G. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 5A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP127. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO220. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220AB. Cost): 70pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: 8A. Max hFE gain: 15000. Minimum hFE gain: 1000. Ic(pulse): 12V. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) TIP132. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 4 v. Vebo: 5V

NPN-Transistor, PCB soldering, TO-247, 100V, 10A, -100V, TO-247, 100V. Housing: PCB soldering. Housing: TO-247. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Housing (JEDEC standard): -100V. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP147. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 500. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) TIP142. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 10A, TO-220, TO-220, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: R1 typ=8k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Spec info: complementary transistor (pair) TIP142T. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, -100V, -10A, TO-3P. Collector-Emitter Voltage VCEO: -100V. Collector current: -10A. Housing: TO-3P. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Power: 125W

NPN-Transistor, TO-247, 100V, 15A, 15A, TO-247, 70V, PCB soldering. Housing: TO-247. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Collector current: 15A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 70V. Housing: PCB soldering. Number of terminals: 3. Manufacturer's marking: TIP2955. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. RoHS: yes. Cutoff frequency ft [MHz]: 3 MHz. Note: complementary transistor (pair) TIP3055. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Spec info: Low collector-emitter saturation voltage. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Component family: PNP power transistor. Configuration: PCB through-hole mounting

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 40V, 1A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP30. Maximum dissipation Ptot [W]: 30W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 3A, TO-220, TO-220, 115V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. BE diode: no. Cost): 160pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) TIP31C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, TO-247, 10A, TO-247, 140V. Housing: TO-247. Collector current: 10A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 140V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-247. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 100. Minimum hFE gain: 20. Ic(pulse): 15A. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) TIP33C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 1V