NPN-Transistor, 4A, TO-220, TO-220AB, 350V - MJE15035G

NPN-Transistor, 4A, TO-220, TO-220AB, 350V - MJE15035G. NPN-Transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: hFE=100 (Min) @ IC=0.5Adc. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 08/06/2025, 04:25.