PNP bipolar transistors

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE resistor: 47k Ohms. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. Function: PNP resistor-equipped transistor. Minimum hFE gain: 100. Ic(pulse): 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 10V. Spec info: screen printing/SMD code 19. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Semiconductor material: silicon. FT: 190 MHz. Function: Switching Transistor. Max hFE gain: 480. Minimum hFE gain: 60. Ic(pulse): 4A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) FMMT619. Spec info: screen printing/SMD code 720

NPN-Transistor, 2A, SANYO--PCP4, 25V. Collector current: 2A. Housing (according to data sheet): SANYO--PCP4. Collector/emitter voltage Vceo: 25V. Semiconductor material: silicon. Ic(pulse): 5A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Epitaxial Planar Silicon Transistor, Composite Schottky Barrier Diode. Type of transistor: PNP. Vcbo: 30 v. Number of terminals: 7. Quantity per case: 1. Spec info: 2SB1121 and SB05-05CP integrated in one case

NPN-Transistor, 8A, TO-3PF, 160V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: yes. Semiconductor material: silicon. FT: 65 MHz. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Number of terminals: 3. Function: hFE 5000. Quantity per case: 1. Spec info: complementary transistor (pair) FN1016. CE diode: yes

NPN-Transistor, 3A, PCP4, 15V. Collector current: 3A. Housing (according to data sheet): PCP4. Collector/emitter voltage Vceo: 15V. Semiconductor material: silicon. Max hFE gain: 280. Minimum hFE gain: 100. RoHS: yes. Assembly/installation: PCB through-hole mounting. Saturation voltage VCE(sat): 0.25V. Quantity per case: 2. Number of terminals: 6. Spec info: Transistor + diode block. CE diode: yes

NPN-Transistor, PCB soldering (SMD), SOT-223, 400V, 0.2A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.2A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT558. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-223, 30 v, 5.5A, SOT-223 ( TO-226 ), SOT-223, 30 v. Housing: PCB soldering (SMD). Housing: SOT-223. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 5.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 30 v. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT949. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.35V. Vebo: 6V. Spec info: Very low saturation voltage

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 3A, 40V. Collector current: 3A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Note: hFE 100...400. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Spec info: TO-92

NPN-Transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32). Collector current: 3A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Spec info: NON-insulated housing

NPN-Transistor, 0.2A, TO-92, TO-92, 30 v. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: KSA642-O

NPN-Transistor, 0.15A, 60V. Collector current: 0.15A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Spec info: Samsung>> STB1277

NPN-Transistor, 0.7A, 80V. Collector current: 0.7A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF/S. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Spec info: 9mm height. CE diode: yes

NPN-Transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Cost): 55pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) KSC2073. BE diode: no. CE diode: no

NPN-Transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: A992. Equivalents: 2SC992. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.9V. Vebo: 5V. Spec info: complementary transistor (pair) KSC1845. BE diode: no. CE diode: no

NPN-Transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: B1366-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Triple Diffused Type. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSD2012. BE diode: no. CE diode: no

NPN-Transistor, 1A, 30 v. Collector current: 1A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Pd (Power Dissipation, Max): 0.8W. Type of transistor: PNP. Spec info: SAMSUNG. CE diode: yes

NPN-Transistor, 0.6A, TO-92, TO-92, 60V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 75. Note: pinout E, C, B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 500mA, TO-92, TO-92 ( Ammo Pack ), 300V. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 300V. Cost): 6pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PNP Epitaxial Silicon Transistor. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: PNP. Spec info: 0504-000142. BE diode: no. CE diode: no

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. BE diode: no. CE diode: no

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 47. BE resistor: 47. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. Function: S. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: 12159-301-810. BE diode: no. CE diode: no

NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE resistor: 10. Cost): 3.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, 150V. Collector current: 1.5A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP