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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD250C-ISC

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD250C-ISC
Quantity excl. VAT VAT incl.
1 - 4 1.96£ 2.35£
5 - 9 1.86£ 2.23£
Quantity U.P
1 - 4 1.96£ 2.35£
5 - 9 1.86£ 2.23£
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Quantity in stock : 9
Set of 1

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD250C-ISC. NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Inchange Semiconductor. Quantity in stock updated on 26/07/2025, 18:25.

Equivalent products :

Quantity in stock : 63
TIP36C

TIP36C

NPN-Transistor, TO-247, 25A, TO-247, 100V. Housing: TO-247. Collector current: 25A. Housing (accordi...
TIP36C
NPN-Transistor, TO-247, 25A, TO-247, 100V. Housing: TO-247. Collector current: 25A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. RoHS: yes. Minimum hFE gain: 25. Ic(pulse): 50A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) TIP35C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Vebo: 5V. BE diode: no. Cost): 45pF. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1512. Max hFE gain: 50
TIP36C
NPN-Transistor, TO-247, 25A, TO-247, 100V. Housing: TO-247. Collector current: 25A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. RoHS: yes. Minimum hFE gain: 25. Ic(pulse): 50A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) TIP35C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Vebo: 5V. BE diode: no. Cost): 45pF. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1512. Max hFE gain: 50
Set of 1
2.58£ VAT incl.
(2.15£ excl. VAT)
2.58£
Quantity in stock : 92
BD250C

BD250C

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 25A. Housing: TO-3P ( ...
BD250C
NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
BD250C
NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD249C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
2.58£ VAT incl.
(2.15£ excl. VAT)
2.58£

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BD249C

BD249C

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218AB, 115V. Collector current: 25A. Housing: TO-3P...
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BD245C-PMC

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2N3442-PMC

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MPSA56

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2SA1294-SKN

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