ON Semiconductor TIG056BF-1E N-Channel IGBT 430V 240A TO-220FP

Technical description of the product (TIG056BF-1E):

Collector/emitter voltage Vceo: 430V. Package (according to datasheet): TO-220F-3FS. Package: TO-220FP. Germanium diode: Suppressor. RoHS: yes. Operating temperature: -55...+150°C. Miscellaneous: flash, strobe control. Spec info: High speed fall time--tf=270nS (typ). CE diode: no. Number of connections: 3. Mounting/installation: through-hole for printed circuit board. Channel type: N. Function: Low-saturation voltage, Ultra high speed switching. Technology: Enhancement type. Td(off): 140 ns. Td(on): 46 ns. Saturation voltage VCE(sat): 3.6V. Ic(puls): 240A. C (in): 5500pF. Gate-emitter voltage VGE: 33V. C (out): 100pF. Max power dissipation: 30W. Max saturation voltage VCE(sat): 5V. Gate-emitter voltage VGE(th) min.: 2.5V. Gate-emitter voltage VGE(th) max.: 5V. Collector current: 240A.