NPN bipolar transistors

NPN transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 20pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Marking on the case: C2383 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SA1013. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V

NPN transistor, 0.15A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.15A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Note: screen printing/SMD code BQ. Marking on the case: BQ. Number of terminals: 3. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Spec info: complementary transistor (pair) 2SA1037. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV

NPN transistor, PCB soldering, P22/U, 50mA. Housing: PCB soldering. Housing: P22/U. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.1A, TO-92, TO-92, 300V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: CSC2342. Pd (Power Dissipation, Max): 0.9W. Spec info: height 5mm. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 600. Minimum hFE gain: 70. Ic(pulse): 5A. Marking on the case: C2500. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: NPN Epitaxial Silicon Transistor. Type of transistor: NPN. Vcbo: 30 v. Saturation voltage VCE(sat): 0.2V. Vebo: 6V

NPN transistor, 10A, TO-3P ( TO3P ), TO-3P, 400V. Collector current: 10A. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 450V

NPN transistor, PCB soldering, D8/C, 50mA. Housing: PCB soldering. Housing: D8/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, D6/C, 20mA. Housing: PCB soldering. Housing: D6/C. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/30V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, 1A, 40V. Collector current: 1A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, 0.1A, TO-126F, TO-126F, 180V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 180V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: hFE 100...200. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.2A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 19pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 155 MHz. Function: HF. Max hFE gain: 320. Minimum hFE gain: 160. Ic(pulse): 2.5A. Marking on the case: C2690A Y. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SA1220A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 1.8pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Ic(pulse): 800mA. Note: 9mm. Marking on the case: C2705. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1145. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Note: screen printing/SMD code DG. Marking on the case: DG. Number of terminals: 3. Pd (Power Dissipation, Max): 150mW. Spec info: complementary transistor (pair) 2SA1163. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 300mV

NPN transistor, PCB soldering, SOT-103, 20mA. Housing: PCB soldering. Housing: SOT-103. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-236, 30mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.15W

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 300mA, TO-92, TO-92, 20V. Collector current: 300mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: For Muting and Switching. Max hFE gain: 1200. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 400mW. RoHS: yes. Spec info: Silicon NPN Epitaxial Type. Assembly/installation: PCB through-hole mounting. Tf(max): 130 ns. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.042V. Vebo: 25V

NPN transistor, PCB soldering, TO-92, 70mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V/160V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, TO-92, TO-92M ( 9mm ), 160V, 70mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Collector current: 70mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SA1208. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 140mA

NPN transistor, 0.14A, TO-126 (TO-225, SOT-32), TO-126, 180V. Collector current: 0.14A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 180V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1209. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 7A, TO-220, TO-220, 400V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Switching Regulator Applications. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V

NPN transistor, 5A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: High Current Switching. Max hFE gain: 240. Minimum hFE gain: 70. Note: for switching applications. Note: complementary transistor (pair) 2SA1244. Marking on the case: C3074. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Spec info: Lo-sat--Vce(sat)--0.2V. Assembly/installation: surface-mounted component (SMD). Technology: Silicon NPN Epitaxial Type (PCT process). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, PCB soldering, D8A/C, 50mA. Housing: PCB soldering. Housing: D8A/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/19V. Maximum dissipation Ptot [W]: 0.3W

NPN transistor, PCB soldering, D6/C, 150mA. Housing: PCB soldering. Housing: D6/C. Collector current Ic [A], max.: 150mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V