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Semiconductors Transistors NPN bipolar transistors

NPN transistor, TO-92, TO-92M ( 9mm ), 160V, 70mA - 2SC2910

NPN transistor, TO-92, TO-92M ( 9mm ), 160V, 70mA - 2SC2910
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Quantity excl. VAT VAT incl.
1 - 4 3.44£ 4.13£
5 - 9 3.27£ 3.92£
10 - 24 3.16£ 3.79£
25 - 49 3.09£ 3.71£
50 - 99 3.03£ 3.64£
100+ 2.85£ 3.42£
Quantity U.P
1 - 4 3.44£ 4.13£
5 - 9 3.27£ 3.92£
10 - 24 3.16£ 3.79£
25 - 49 3.09£ 3.71£
50 - 99 3.03£ 3.64£
100+ 2.85£ 3.42£
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Out of stock
Set of 1

NPN transistor, TO-92, TO-92M ( 9mm ), 160V, 70mA - 2SC2910. NPN transistor, TO-92, TO-92M ( 9mm ), 160V, 70mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Collector current: 70mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SA1208. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 140mA. Original product from manufacturer Sanyo. Quantity in stock updated on 25/07/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 30
2SC3467

2SC3467

NPN transistor, 0.1A, TO-92, SC-51 ( MP ), 200V. Collector current: 0.1A. Housing: TO-92. Housing (a...
2SC3467
NPN transistor, 0.1A, TO-92, SC-51 ( MP ), 200V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 1.7pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Video, Hi-def. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 0.2A. Note: 9mm height. Marking on the case: C3467. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V
2SC3467
NPN transistor, 0.1A, TO-92, SC-51 ( MP ), 200V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 1.7pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Video, Hi-def. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 0.2A. Note: 9mm height. Marking on the case: C3467. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V
Set of 1
2.16£ VAT incl.
(1.80£ excl. VAT)
2.16£
Quantity in stock : 20777
BF421

BF421

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (accordin...
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
Set of 10
1.12£ VAT incl.
(0.93£ excl. VAT)
1.12£
Quantity in stock : 33
2SC2705

2SC2705

NPN transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Hou...
2SC2705
NPN transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 1.8pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Ic(pulse): 800mA. Note: 9mm. Marking on the case: C2705. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1145. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
2SC2705
NPN transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 1.8pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Ic(pulse): 800mA. Note: 9mm. Marking on the case: C2705. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1145. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
1.24£ VAT incl.
(1.03£ excl. VAT)
1.24£

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