NPN bipolar transistors

NPN transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. Cost): 1.8pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Ic(pulse): 800mA. Marking on the case: C2705. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Note: 9mm. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1145. BE diode: no. CE diode: no

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 120V. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Marking on the case: DG. Pd (Power Dissipation, Max): 150mW. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 300mV. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code DG. Spec info: complementary transistor (pair) 2SA1163. BE diode: no. CE diode: no

NPN transistor, PCB soldering, SOT-103, 20mA. Housing: PCB soldering. Housing: SOT-103. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-236, 30mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.15W

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 300mA, TO-92, TO-92, 20V. Collector current: 300mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Semiconductor material: silicon. FT: 30 MHz. Function: For Muting and Switching. Max hFE gain: 1200. Minimum hFE gain: 200. Pd (Power Dissipation, Max): 400mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 130 ns. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.042V. Vebo: 25V. Number of terminals: 3. Quantity per case: 1. Spec info: Silicon NPN Epitaxial Type

NPN transistor, PCB soldering, TO-92, 70mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V/160V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, PCB soldering, TO-92, 70mA, TO-92M ( 9mm ), 160V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. RoHS: yes. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208

NPN transistor, 0.14A, TO-126, 180V, TO-126 (TO-225, SOT-32). Collector current: 0.14A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 0.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1209. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 150mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 150mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 7A, TO-220, TO-220, 400V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. FT: 20 MHz. Function: Switching Regulator Applications. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V. Quantity per case: 1

NPN transistor, PCB soldering, D18/C, 200mA. Housing: PCB soldering. Housing: D18/C. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Maximum dissipation Ptot [W]: 1W

NPN transistor, 5A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. FT: 120 MHz. Function: High Current Switching. Max hFE gain: 240. Minimum hFE gain: 70. Marking on the case: C3074. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon NPN Epitaxial Type (PCT process). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V. Number of terminals: 2. Note: for switching applications. Quantity per case: 1. Note: complementary transistor (pair) 2SA1244. Spec info: Lo-sat--Vce(sat)--0.2V

NPN transistor, PCB soldering, D8A/C, 50mA. Housing: PCB soldering. Housing: D8A/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/19V. Maximum dissipation Ptot [W]: 0.3W

NPN transistor, PCB soldering, D6/C, 150mA. Housing: PCB soldering. Housing: D6/C. Collector current Ic [A], max.: 150mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-92, 150mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 150mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 1.5A, 180V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 120 MHz. Function: TV-NF/E. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1249

NPN transistor, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V. Quantity per case: 1

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 900V. Saturation voltage VCE(sat): 2V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: 15 MHz. Function: S-L. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V. Quantity per case: 1

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: no. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC3157. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1265

NPN transistor, 0.02A, 40V. Collector current: 0.02A. Collector/emitter voltage Vceo: 40V. Semiconductor material: silicon. FT: 550 MHz. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.05A, TO-92, TO-92, 30 v. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Semiconductor material: silicon. FT: 660 MHz. Function: TV-ZF. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1