NPN bipolar transistors

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1100V. Saturation voltage VCE(sat): 2V. Vebo: 7V

NPN transistor, 0.1A, TO-92, SC-51 ( MP ), 200V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 1.7pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Video, Hi-def. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 0.2A. Note: 9mm height. Marking on the case: C3467. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN transistor, 0.1A, TO-126F, TO-126, 300V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 2.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Audio Voltage Amplifier, CRT Definition, Video Output. Max hFE gain: 120. Minimum hFE gain: 60. Ic(pulse): 0.2A. Marking on the case: C3503-D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 7W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1381. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.6V

NPN transistor, 15A, TO-3P ( TO3P ), TO3P-3L, 180V. Collector current: 15A. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO3P-3L. Collector/emitter voltage Vceo: 180V. BE diode: no. Cost): 250pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for Hi-fi audio amplifiers. Max hFE gain: 180. Minimum hFE gain: 50. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SA1386A. Technology: NPN Epitaxial Planar Transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 700mA, TO-92, SC-43B, TO92, 25V. Collector current: 700mA. Housing: TO-92. Housing (according to data sheet): SC-43B, TO92. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 250MHz. Function: Hi-beta. Max hFE gain: 3200. Minimum hFE gain: 800. Ic(pulse): 1A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 15V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.5A, 80V. Collector current: 0.5A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: Low Frequency Drive Applications. Note: hFE 140...280. Pd (Power Dissipation, Max): 0.6W. Spec info: complementary transistor (pair) 2SA1480. Type of transistor: NPN

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/18V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, TO-220FP, TO-220F. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Quantity per case: 1. Function: S-L. Assembly/installation: PCB through-hole mounting

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/16V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 0.2A, 200V. Collector current: 0.2A. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: Hi-def. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) 2SA1476. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V/20V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 5A, TO-220FP, TO-220F, 550V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 550V. C(in): 4pF. Cost): 10pF. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 2A, TO-126F, TO-126LP, 30 v. Collector current: 2A. Housing: TO-126F. Housing (according to data sheet): TO-126LP. Collector/emitter voltage Vceo: 30 v. Resistor B: 22. BE resistor: 22. Quantity per case: 1. Semiconductor material: silicon. FT: 260 MHz. Function: hFE 800. Pd (Power Dissipation, Max): 1.5W. Spec info: Hi-Ube, lo-sat.. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-98, 20mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/30V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, PCB soldering, TO-98, 50mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.05A, 75V. Collector current: 0.05A. Collector/emitter voltage Vceo: 75V. Resistor B: 47. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: TV-ZF-E. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 3A, TO-220FP, MF20 TO220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): MF20 TO220F. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Driver for Solenoid and Motor. Minimum hFE gain: 500. Pd (Power Dissipation, Max): 25W. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, 8A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V. Collector current: 8A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 200V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Marking on the case: C3856. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SA1492. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN