NPN bipolar transistors

NPN transistor, 0.15A, TO-92, TO-92, 60V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Marking on the case: C3198. Pd (Power Dissipation, Max): 0.4W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 150mA, TO-92, TO-92, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Max hFE gain: 700. Minimum hFE gain: 70. Temperature: +125°C. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. Number of terminals: 3. Spec info: replacement KTA1267. BE diode: no. CE diode: no

NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 40V. Semiconductor material: silicon. FT: 200 MHz. Function: Hi-Beta, lo-sat.. Minimum hFE gain: 500. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Tf(max): 1.2us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Number of terminals: 3. Note: 9mm. Quantity per case: 1

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 230V. Cost): 250pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Max hFE gain: 140. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1294. BE diode: no. CE diode: no

NPN transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1295

NPN transistor, 12A, TO-247, TO-247, 160V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 160V. Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1301

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1302. BE diode: no. CE diode: no

NPN transistor, 14A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 14A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1303

NPN transistor, 1.5A, TO-220FP, 160V. Collector current: 1.5A. Housing: TO-220FP. Collector/emitter voltage Vceo: 160V. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Max hFE gain: 240. Minimum hFE gain: 70. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Vcbo: 160V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1306

NPN transistor, 5A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V. Collector current: 5A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 80V. Semiconductor material: silicon. FT: 120 MHz. Function: High Speed ​​Switching. Max hFE gain: 240. Minimum hFE gain: 70. Ic(pulse): 8A. Marking on the case: C3303. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Vebo: 7V. Number of terminals: 2. Quantity per case: 1

NPN transistor, 5A, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 120 MHz. Ic(pulse): 8A. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 8V. Quantity per case: 1. Function: NF/SL. BE diode: no. CE diode: no

NPN transistor, 0.7A, 180V. Collector current: 0.7A. Collector/emitter voltage Vceo: 180V. Semiconductor material: silicon. FT: 120 MHz. Function: High-Voltage Switching Applications. Pd (Power Dissipation, Max): 0.7W. Type of transistor: NPN. Note: hFE 140...280. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1319

NPN transistor, 5A, 500V. Collector current: 5A. Collector/emitter voltage Vceo: 500V. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Vcbo: 900V. Quantity per case: 1

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Semiconductor material: silicon. Function: UHF. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 200mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, TO-92, 200mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. Function: 250 MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.05A, TO-126F, TO-126F, 150V. Collector current: 0.05A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 150V. Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1360

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V. Function: hFE 15...30. Quantity per case: 1

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V. Function: hFE 20...40. Quantity per case: 1

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1100V. Saturation voltage VCE(sat): 2V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 0.1A, TO-92, SC-51 ( MP ), 200V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Collector/emitter voltage Vceo: 200V. Cost): 1.7pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 0.2A. Marking on the case: C3467. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: 9mm height. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Function: Video, Hi-def. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 0.1A, TO-126F, TO-126, 300V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Cost): 2.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 120. Minimum hFE gain: 60. Ic(pulse): 0.2A. Marking on the case: C3503-D. Temperature: +150°C. Pd (Power Dissipation, Max): 7W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.6V. Number of terminals: 3. Quantity per case: 1. Function: Audio Voltage Amplifier, CRT Definition, Video Output. Spec info: complementary transistor (pair) 2SA1381. BE diode: no. CE diode: no